Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk
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United States of America Patent
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Issued Date -
Sep 4, 2008
app pub date -
Feb 22, 2006
filing date -
Feb 28, 2005
priority date (Note) -
Abandoned
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Abstract
A method of fabricating an image sensor device (5) transferring an intensity of radiation (1) into an electrical current (i-i, .sup.a2) depending on said intensity, comprising the following steps in a vacuum deposition device: Depositing onto a dielectric, insulating surface a matrix of electrically conducting pads (7a, 7b) as rear electrical contacts, plasma assisted exposing said surface with pads to a donor delivering gas without adding a silicon containing gas, depositing a layer (15) of intrinsic silicon from a silicon delivering gas depositing a doped layer (17) and arranging an electrically conductive layer (19) transparent for said radiation (1) as a front contact. The method of fabricating an image-sensor-device and the image-sensor-device are avoiding disadvantages of the prior art. This means the image-sensor-device of the invention has a good ohmic contact, a low dark-current, no pixel-cross-talk and a reproducible fabrication-process.
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