Debris management for wafer singulation

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United States of America Patent

SERIAL NO

11875893

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention discloses methods and apparatuses for substrate singulation. Embodiments of the present invention comprise cryogenic-assist scribing or cutting mechanism for debris reduction, preferably cryogenic-assist laser scribe or cutting; controlling mechanism for debris flow and redeposition during laser process; and integrated, dry debris removal scribing process with breaking mechanism. An exemplary embodiment comprises an integrated housing for aligning a laser beam with the cryogenic cleaning beam. The integrated housing is preferably made of low thermal conductivity material to provide a high temperature gradient between the low temperature of the cryogenic fluid and the ambient temperature, preventing condensation of the moisture. The entire areas, or the critical areas of the apparatus can also be purged with flowing 'dry' inert gases to further reduce the condensation moisture. Reactive gas can be introduced to react with debris, converting into gaseous form for ease of removal.

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Patent Owner(s)

Patent OwnerAddress
DYNATEX5577 SKYLANE BOULEVARD SANTA ROSA CA 95403

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Henry, Kathaleen Healdsburg, CA 1 36
Makhamreh, Khalid Los Gatos, CA 26 189
Mangano, Stefano Menlo Park, CA 6 548
Reinhardt, Karen Ann San Jose, CA 2 41
Seemann, Ferdinand Livermore, CA 4 47
Setton, David Acher Oakland, CA 1 36
Tannous, Adel George Santa Clara, CA 25 458

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