Methods for etching layers within a MEMS device to achieve a tapered edge
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United States of America Patent
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Feb 9, 2010
Grant Date -
Sep 11, 2008
app pub date -
Aug 18, 2006
filing date -
Aug 19, 2005
priority date (Note) -
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Abstract
Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
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