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Abstract

The present invention relates to an Al-based alloy sputtering target, comprising Ni in an amount of 0.05 to 10 atomic percent, wherein the Al-based alloy sputtering target satisfies: (1) that a ratio of a P value to a total area of a sputtering surface is 70% or more, wherein the P value indicates a total of area fractions of <001>.+-.15.degree., <011>.+-.15.degree., <111>.+-.15.degree. and <311>.+-.15.degree.; (2) that a ratio of the area fraction of <011>.+-.15.degree. to the P value is 30% or more; and (3) that a ratio of the area fraction of <111>.+-.15.degree. to the P value is 10% or less, when crystallographic orientations <001>, <011>, <111> and <311> in a normal line direction to a sputtering surface of the Al-based alloy sputtering target are observed in accordance with the electron backscatter diffraction pattern method.

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First Claim