Method for forming a seed layer for damascene copper wiring, and semiconductor wafer with damascene copper wiring formed using the method
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United States of America Patent
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Issued Date -
Sep 18, 2008
app pub date -
Mar 13, 2008
filing date -
Mar 14, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for forming a seed layer for damascene copper wiring is provided. The method comprises the step of forming a seed layer, during damascene copper wiring formation, using an electroless plating solution comprising a water-soluble nitrogen-containing polymer and glyoxylic acid as a reducing agent, wherein the weight-average molecular weight (Mw) of the water-soluble nitrogen-containing polymer is 1,000 to less than 100,000. Preferably, the electroless plating solution further comprises phosphinic acid.
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