Method of forming ohmic contact to a semiconductor body
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United States of America Patent
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app pub date -
Apr 29, 2008
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Jun 29, 2005
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Abstract
A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal.
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