Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same

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United States of America Patent

PATENT NO 7781290
APP PUB NO 20080233693A1
SERIAL NO

12108304

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Abstract

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A complementary metal-oxide semiconductor (CMOS) device includes an NMOS thin body channel including a silicon epitaxial layer. An NMOS insulating layer is formed on a surface of the NMOS thin body channel and surrounds the NMOS thin body channel. An NMOS metal gate is formed on the NMOS insulating layer. The CMOS device further includes a p-channel metal-oxide semiconductor (PMOS) transistor including a PMOS thin body channel including a silicon epitaxial layer. A PMOS insulating layer is formed on a surface of and surrounds the PMOS thin body channel. A PMOS metal gate is formed on the PMOS insulating layer. The NMOS insulating layer includes a silicon oxide layer and the PMOS insulating layer includes an electron-trapping layer, the NMOS insulating layer includes a hole trapping dielectric layer and the PMOS insulating layer includes a silicon oxide layer, or the NMOS insulating layer includes a hole-trapping dielectric layer and the PMOS insulating layer includes an electron-trapping dielectric layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO59944

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Sung-min Incheon Metropolitan, KR 183 1574
Lee, Sung-young Gyeonggi-do, KR 90 869
Suk, Sung-dae Seoul, KR 32 249
Yun, Eun-jung Seoul, KR 62 990

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 2005/0224,897 High-K gate dielectric stack with buffer layer to improve threshold voltage characteristics 70 2004
7112832 Transistor having multiple channels 16 2005
 
RENESAS ELECTRONICS CORPORATION (1)
5965914 Thin film transistor having a branched gate and channel 100 1997
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 2005/0098,839 Semiconductor devices having different gate dielectrics and methods for manufacturing the same 82 2004
 
AURIGA INNOVATIONS, INC. (1)
6653698 Integration of dual workfunction metal gate CMOS devices 85 2001
 
INFINEON TECHNOLOGIES AG (1)
2005/0282,329 CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof 48 2005
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
GLOBALFOUNDRIES INC. (2)
9190471 Semiconductor structure having a source and a drain with reverse facets 1 2012
9673296 Semiconductor structure having a source and a drain with reverse facets 0 2015
 
SAMSUNG ELECTRONICS CO., LTD. (3)
9466601 Semiconductor device and method of fabricating the same 0 2014
9590038 Semiconductor device having nanowire channel 0 2015
9711506 Semiconductor device and method of fabricating the same 0 2016
* Cited By Examiner

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