Composition for polishing semiconductor wafer, and method of producing the same
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United States of America Patent
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Issued Date -
Oct 2, 2008
app pub date -
Mar 17, 2008
filing date -
Mar 19, 2007
priority date (Note) -
Abandoned
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Abstract
A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C): (A) a specific surface area in the range of 50 to 200 m.sup.2/g measured by a BET method;(B) an average particle diameter in the range of 10 to 50 nm measured by a laser light-scattering method; and(C) an average ratio A/B of the major axis A to the minor axis B of the fumed silica particles in the range of 1.2 to 2.0 measured by TEM observation,wherein the concentration of silica particles containing the fumed silica particles is in the range of 0.5 to 50 weight percent relative to the total weight of an aqueous dispersion.
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