Non-volatile memory with compensation for variations along a word line

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7577031
APP PUB NO 20080239824A1
SERIAL NO

11693616

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Variation in programming efficacy due to variation in time constants along a word line that spans across a memory plane is compensated by adjusting the bit line voltages across the plane to modify the programming rates. In this way, the variation in programming efficacy is substantially reduced during programming of a group of memory cells coupled to the word line. This will allow uniform optimization of programming across the group of memory cells and reduce the number of programming pulses required to program the group of memory cells, thereby improving performance. In one embodiment, during programming, the bit lines in a first half of the memory plane closer to a source of word line voltage is set to a first voltage and the bit lines in a second half of the memory plane further from the source of word line voltage is set to a second voltage.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mokhlesi, Nima Los Gatos, US 194 9379
Mui, Man Lung Santa Clara, US 52 757
Sekar, Deepak Chandra Atlanta, US 57 989

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation