Damascene conductive line for contacting an underlying memory element
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United States of America Patent
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Jun 1, 2010
Grant Date -
Oct 9, 2008
app pub date -
Jun 6, 2008
filing date -
Aug 4, 2003
priority date (Note) -
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Abstract
A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change memory storage element.
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