Compound Semiconductor Substrate
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United States of America Patent
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Issued Date -
Oct 9, 2008
app pub date -
Feb 15, 2005
filing date -
Mar 19, 2004
priority date (Note) -
Abandoned
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Abstract
It is to provide a substrate for epitaxial growth, which is capable of improving a surface state of an epitaxial layer at microroughness level. In a substrate for epitaxial growth, when haze is defined as a value calculated by dividing intensity of scattered light obtained when light is incident from a predetermined light source onto a surface of a substrate, by intensity of the incident light from the light source, the haze is not more than 2 ppm all over an effectively used area of the substrate and an off-angle with respect to a plane direction is 0.05 to 0.10.degree..
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