Thin film transistor, method for fabricating same and liquid crystal display using same
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United States of America Patent
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Issued Date -
Oct 16, 2008
app pub date -
Apr 14, 2008
filing date -
Apr 13, 2007
priority date (Note) -
Abandoned
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Abstract
A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer covering the gate electrode and the substrate, an a-Si layer and a heavily doped a-Si layer on the gate insulating layer, a conductive film formed on the heavily doped a-Si layer, part of the a-Si layer, and the gate insulating layer, and a source electrode and a drain electrode on the conductive film. A work function of the conductive film is greater than a work function of the a-Si layer.
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