Rare earth magnet and method for producing same

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United States of America Patent

PATENT NO 7655325
APP PUB NO 20080254285A1
SERIAL NO

12145595

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Abstract

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B type crystals; and a second reaction layer, which is located between the first reaction layer and the metal film and which has a lower rare-earth element concentration than that of the first reaction layer.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukagawa, Tomoki Osaka, JP 8 482

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