Air cell thermal isolation for a memory array formed of a programmable resistive material
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United States of America Patent
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Oct 19, 2010
Grant Date -
Oct 30, 2008
app pub date -
Nov 21, 2006
filing date -
Nov 21, 2005
priority date (Note) -
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Abstract
A memory device includes, a first electrode element, generally planar in form, having an inner contact surface. Then there is a cylindrical cap layer, spaced from the first electrode element, and a phase change element having contact surfaces in contact with the first electrode contact surface and the cap layer, in which the lateral dimension of the phase change element is less than that of the first electrode element and the cylindrical cap layer. A second electrode element extends through the cap layer to make contact with the phase change element. Side walls aligned with the cap layer, composed of dielectric fill material, extend between the first electrode elements and the cap layer, such that the phase change element, the contact surface of the first electrode element and the side walls define a gas-filled thermal isolation cell adjacent the phase change element.
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