PHASE CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME
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United States of America Patent
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app pub date -
Apr 25, 2008
filing date -
May 4, 2007
priority date (Note) -
Abandoned
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Abstract
A memory device using a phase change material and a method for forming the same are disclosed. One embodiment of a memory device includes a first insulating layer provided on a substrate and defining an opening; a first conductor including a first portion and a second portion, the first portion provided on a bottom of the opening, the second portion being continuously provided along a sidewall of the opening; a variable resistor connected to the second portion of the first conductor and provided along the sidewall of the opening; and a second conductor provided on the variable resistor.
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