Method for Chemical-Mechanical Planarization of Copper
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United States of America Patent
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app pub date -
Jun 27, 2008
filing date -
Jul 30, 2003
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Abandoned
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Abstract
Method for polishing copper by chemical-mechanical planarization. The method of the present invention includes dissolving MoO.sub.3 in an oxidizing agent and deionized water to form a first slurry; filtering the first slurry; adding supplemental ceramic/metal oxide nano-particles to the first slurry after filtering, forming an aqueous slurry; introducing the aqueous slurry between the copper and a polishing pad; and, polishing the copper by moving the polishing pad and the copper relative to one another.
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