Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials
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United States of America Patent
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Jun 23, 2008
filing date -
Jan 28, 2005
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Abstract
A method for forming electrically stimulable materials, including programmable resistance and electrical switching materials, in high aspect ratio features. The method includes forming a seed layer in the recessed portion of a feature and using the seed layer to direct the vapor phase deposition of an electrically stimulable material. The seed layer may provide nucleation sites that lead to preferential deposition of the electrically stimulable material on the seed layer relative to the sidewalls of the feature. The seed layer may promote the formation of a finely crystalline morphology of the electrically stimulable material to facilitate deposition in the recessed portions of a feature and inhibit blocking of the top of the feature by large crystals.
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