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Abstract

A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In.sub.2O.sub.3 including at least one of Zn, Mg and Cu.

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First Claim