Asymmetric field effect transistors (FETs)
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United States of America Patent
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Feb 17, 2009
Grant Date -
Nov 27, 2008
app pub date -
Jul 8, 2008
filing date -
Apr 27, 2005
priority date (Note) -
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Abstract
A semiconductor structure. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical contact with the semiconductor source block, wherein the source contact region comprises a first electrically conducting material, and wherein the semiconductor source block physically isolates the source contact region from the semiconductor channel region, and (d) a drain contact region in direct physical contact with the semiconductor channel region, wherein the semiconductor channel region is disposed between the semiconductor source block and the drain contact region, and wherein the drain contact region comprises a second electrically conducting material; and (e) a gate stack in direct physical contact with the semiconductor channel region.
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