Method and Reactor for Continuous Production of Semiconductor Grade Silicon
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United States of America Patent
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Issued Date -
Nov 27, 2008
app pub date -
Jul 1, 2005
filing date -
Jul 16, 2004
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Abandoned
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Abstract
This invention relates to a method and reactor for continuous production of semiconductor grade silicon by decomposition of a silicon containing gas of ultra-high purity to particulate silicon and other decomposition products in a free-space reactor and in which the gaseous stream of decomposition gas is set into a swirl motion. Optionally the method and reactor also includes means for melting the formed particulate silicon to obtain a continuous phase of elementary silicon, and then casting the liquid silicon to form solid objects of semiconductor grade silicon.
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