Sintered power semiconductor substrate and method of producing the substrate
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United States of America Patent
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Issued Date -
Nov 27, 2008
app pub date -
May 12, 2008
filing date -
May 12, 2007
priority date (Note) -
Abandoned
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Abstract
A power semiconductor substrate with an insulating sheet-like base, having at least one sequence of layers of: a thin adhesion promoting layer, a sintered metal layer and a conductive layer arranged on at least one main area of the substrate. The associated process includes the steps of: coating at least a portion of the one main area with the adhesion promoting layer; arranging a pasty layer of the sintered metal and a solvent on at least a portion of the adhesion promoting layer; arranging the conductive layer on the sintered metal layer; and applying pressure to the conductive layer of the power substrate.
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