Plasma Systems with Magnetic Filter Devices to Alter Film Deposition/Etching Characteristics

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United States of America Patent

SERIAL NO

12191505

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Abstract

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Plasma systems with magnetic filter devices to alter film deposition/etching characteristics by altering the effective magnetic field distribution. The magnetic filter devices are placed between the magnet or magnets and a target, typically a semiconductor wafer, and selected and configured to alter the magnetic field to obtain the desired processing results. For deposition, the magnetic filter may be chosen to provide more uniform deposition, to provide increased deposition rates at or adjacent the edges of a wafer to compensate for increased etching rates at the edges of a wafer in a subsequent etching or polishing process. For annealing and doping, the magnetic field may be altered to provide more uniform equivalent annealing or doping across the wafer. Various applications are disclosed.

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Patent Owner(s)

Patent OwnerAddress
MAXIM INTEGRATED PRODUCTS INCSAN JOSE CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ellul, Joseph Paul San Jose, CA 4 32
Kelly, Jack San Jose, CA 9 37
Patel, Rajiv L San Jose, CA 3 37
Schmidt, Melvin C San Jose, CA 7 338
Zekeriya, Viktor Atherton, CA 6 24

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