Double gate manufactured with locos techniques
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
May 29, 2007
filing date -
May 29, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
This invention discloses a trenched semiconductor power device that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The trenched gate further includes at least two mutually insulated trench-filling segments with a bottom insulation layer surrounding a bottom trench-filling segment having a bird-beak shaped layer on a top portion of the bottom insulation attached to sidewalls of the trench extending above a top surface of the bottom trench-filling segment.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully