GATE AND MANUFACTURING METHOD OF GATE MATERIAL
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United States of America Patent
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app pub date -
May 29, 2007
filing date -
May 29, 2007
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Abstract
A gate including a conductive buffer layer and a conductive layer is provided. The conductive buffer layer is disposed on a gate dielectric layer, and the average grain size of the conductive buffer layer is less than 100 nm. The conductive layer is disposed on the conductive buffer layer, and the average grain size of the conductive layer is greater than or equal to 100 nm. The disposition of the conductive buffer layer reduces the undesired effect caused by noise and dark current to the performance of the device.
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