Memory cell with voltage modulated sidewall poly resistor
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United States of America Patent
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Issued Date -
Jan 1, 2009
app pub date -
Jun 28, 2007
filing date -
Jun 28, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A two terminal nonvolatile memory cell includes a first electrode, a second electrode, a charge storage medium, and a resistive element. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes. A presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.
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