Electrical device and method for fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 14, 2010
Grant Date -
Jan 8, 2009
app pub date -
Sep 17, 2008
filing date -
Jan 12, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully