Methods of etching nanodots, methods of removing nanodots from substrates, methods of fabricating integrated circuit devices, methods of etching a layer comprising a late transition metal, and methods of removing a layer comprising a late transition metal from a substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 23, 2010
Issued Date -
N/A
app pub date -
Jul 5, 2007
filing date -
Jul 5, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully