Light-emitting diode with increased light extraction
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United States of America Patent
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Aug 30, 2011
Grant Date -
Jan 15, 2009
app pub date -
Jul 15, 2008
filing date -
Jan 11, 2005
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Abstract
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
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