BURIED CONTACT DEVICES FOR NITRIDE-BASED FILMS AND MANUFACTURE THEREOF
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United States of America Patent
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Issued Date -
Jan 22, 2009
app pub date -
Jul 18, 2008
filing date -
Jul 20, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device comprising: a substrate; a first contact; a first layer of doped semiconductor material deposited on the substrate; a semiconductor junction region deposited on the first layer; a second layer of doped semiconductor material deposited on the junction region, the second layer having opposite semiconductor doping polarity to that of the first layer; and a second contact; wherein the second contact is in electrical communication with the second layer and the first contact is embedded within the semiconductor device between the substrate and the junction region and is in electrical communication with the first layer; and processes for manufacture of an embedded contact semiconductor device.
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