Methods for forming electrodes in phase change memory devices
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United States of America Patent
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app pub date -
May 1, 2008
filing date -
Jul 23, 2007
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Abstract
A method for forming electrode materials uniformly within openings having small dimensions, including sublithographic dimensions, or high aspect ratios. The method includes the steps of providing an insulator layer having an opening formed therein, forming a non-conformal conductive or semiresistive material over and within the opening, and mobilizing the conductive material to densify it within the opening. The method reduces the concentration of voids or defects in the conductive or semiresistive material relative to the as-deposited state. The mobilizing step may be accomplished by extrusion or thermal reflow and causes voids or defects to coalesce, collapse, percolate, or otherwise be removed from the as-deposited conductive or semiresistive material.
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