Method of fabricating schottky barrier diode
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United States of America Patent
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Issued Date -
Jan 29, 2009
app pub date -
Jul 22, 2008
filing date -
Jul 27, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
type element-segmenting region surrounding the Schottky contact region, within each of the unit regions; forming an insulation layer on a portion of the top surface of the semiconductor substrate other than the Schottky contact regions; forming a barrier metal on each of top surfaces of the Schottky contact regions; forming a first electrode on the side of the top surface of the semiconductor substrate in such a manner as to be electrically connected to all of the barrier metals; and forming a second electrode on the side of a bottom surface of the semiconductor substrate in such a manner as to be electrically connected to the substrate layer.
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