PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Feb 5, 2009
app pub date -
Dec 27, 2007
filing date -
Aug 1, 2007
priority date (Note) -
Abandoned
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Abstract
A phase change memory device is disclosed. A first dielectric layer having a sidewall is provided. A bottom electrode is adjacent to the sidewall of the first dielectric layer, wherein the bottom electrode comprises a seed layer and a conductive layer. A second dielectric layer is adjacent to a side of the bottom electrode opposite the sidewall of the first dielectric layer. A top electrode couples the bottom electrode through a phase change layer.
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