Semiconductor light emitting devices with applied wavelength conversion materials
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United States of America Patent
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Jan 4, 2011
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app pub date -
Aug 7, 2007
filing date -
Aug 7, 2007
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Abstract
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
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