ENHANCED SENSITIVITY NON-CONTACT ELECTRICAL MONITORING OF COPPER CONTAMINATION ON SILICON SURFACE
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United States of America Patent
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Issued Date -
Feb 19, 2009
app pub date -
May 30, 2008
filing date -
Jun 6, 2007
priority date (Note) -
Abandoned
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Abstract
Methods of measuring copper impurities on a silicon surface are disclosed. In certain embodiments, copper is electrically activated by ultra-violet illumination of the surface at room temperature. Activation can enhance the copper contribution to surface recombination and to surface voltage which are measured in a non-contact manner using a ac-surface photovoltage and a vibrating Kelvin-probe, respectively. Differential measurements before and after activation enable the separations of the copper impurities from other surface contaminants.
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