SILICON OXY-NITRIDE (SiON) LINER, SUCH AS OPTIONALLY FOR NON-VOLATILE MEMORY CELLS
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United States of America Patent
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Issued Date -
Mar 12, 2009
app pub date -
Sep 6, 2007
filing date -
Sep 6, 2007
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Abstract
An improved contact etch stop liner (CESL) is provided, to reduce stress effects in NVM cells using a nitride charge-trapping layer (such as NROM). SiON (silicon oxy-nitride) may be used in lieu of SiN (silicon nitride), for the CESL. Or, the CESL may be processed to be discontinuous, to reduce stress effects, using either conventional SiN (silicon nitride) or SiON. Or, the CESL layer may be eliminated entirely, to reduce stress effects.
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