Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages

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United States of America Patent

PATENT NO 7885112
APP PUB NO 20090067244A1
SERIAL NO

11852229

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Abstract

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Features within an integrated-circuit memory chip enables scrambling or randomization of data stored in an array of nonvolatile memory cells. In one embodiment, randomization within each page helps to control source loading errors during sensing and floating gate to floating gate coupling among neighboring cells. Randomization from page to page helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. In another embodiment, randomization is implemented both within a page and between pages. The scrambling or randomization may be predetermined, or code generated pseudo randomization or user driven randomization in different embodiments. These features are accomplished within the limited resource and budget of the integrated-circuit memory chip.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fong, Yupin Kawing Fremont, US 47 3626
Li, Yan Milpitas, US 1329 19621
Mokhlesi, Nima Los Gatos, US 194 9379

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