Higher threshold voltage phase change memory

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United States of America Patent

APP PUB NO 20090072218A1
SERIAL NO

11901492

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Abstract

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A phase change memory may be formed of a phase change material alloy that produces a higher threshold voltage and, in some cases, is operable at higher temperatures. For example, the formulation may include a poor metal, antimony, and at least one of tellurium or selenium.

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Patent Owner(s)

Patent OwnerAddress
OVONYX INC2956 WATERVIEW DRIVE ROCHESTER HILLS MI 48309

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Karpov, Ilya Santa Clara, US 16 201
Reid, Jason San Jose, US 15 1188
Savransky, Semyon Newark, US 1 6

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