Copper Indium Diselenide-Based Photovoltaic Device And Method Of Preparing the Same
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United States of America Patent
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Issued Date -
Apr 2, 2009
app pub date -
Apr 18, 2007
filing date -
Apr 18, 2006
priority date (Note) -
Abandoned
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Abstract
A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device.
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