Copper Indium Diselenide-Based Photovoltaic Device And Method Of Preparing The Same
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United States of America Patent
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Issued Date -
Apr 2, 2009
app pub date -
Apr 18, 2007
filing date -
Apr 18, 2006
priority date (Note) -
Abandoned
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Abstract
A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition and a metal foil layer. The substrate, due to the presence of the silicone layer and the metal foil layer, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device.
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