PHOTOMASK DEFECT CORRECTION DEVICE AND PHOTOMASK DEFECT CORRECTION METHOD

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United States of America Patent

APP PUB NO 20090092905A1
SERIAL NO

12145985

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a photomask defect correction method of correcting a defect on a photomask including a substrate (2) and a mask pattern (3) by cutting and removing processing a defect portion (5) based on observation data obtained through AFM observation of the photomask in advance, including: an area setting step of setting a processing area (E1) based on the observation data, and setting areas adjacent to the processing area as removing processing areas (E2) of cutting wastes for cutting and removing the cutting wastes which are produced by the cutting and removing processing and may be firmly adhered; a processing step of cutting and removing processing the defect portion with a probe; and a moving step of moving the cutting wastes by scanning the probe with a weaker pressing force than the pressing force at the time of cutting and processing within the removing processing areas of cutting wastes to conduct a cutting wastes removing process.

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Patent Owner(s)

Patent OwnerAddress
SII NANOTECHNOLOGY INCCHIBA COUNTY CHIBA JAPAN CHIBA-SHI CHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakaue, Takuya Chiba-shi , JP 7 22
Takaoka, Osamu Chiba-shi , JP 36 142
Uemoto, Atsushi Chiba-shi , JP 46 301

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