Method for manufacturing dual gate in semiconductor device

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United States of America Patent

PATENT NO 7989281
APP PUB NO 20090093097A1
SERIAL NO

12104819

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Abstract

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Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on a semiconductor substrate, forming a diffusion barrier layer on the gate conductive layer, forming a barrier metal layer on the diffusion barrier layer, depositing a first gate metal layer on the barrier metal layer, forming a metal nitride barrier layer on a surface of the first gate metal layer by supplying nitrogen (N2) plasma on the first gate metal layer, forming a second gate metal layer on the metal nitride barrier layer, and forming a hard mask layer on the second gate metal layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HYNIX SEMICONDUCTOR INC.KYOUNGKI-DO3939

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Hyun Phill Icheon-si, KR 3 5

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