Vacuum jacketed electrode for phase change memory element
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United States of America Patent
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Mar 30, 2010
Grant Date -
Apr 16, 2009
app pub date -
Dec 16, 2008
filing date -
Nov 21, 2005
priority date (Note) -
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Abstract
A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.
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