Semiconductor device having gate electrode including metal layer and method of manufacturing the same
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United States of America Patent
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Issued Date -
Apr 23, 2009
app pub date -
Dec 20, 2007
filing date -
Jan 17, 2007
priority date (Note) -
Abandoned
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Abstract
A semiconductor device may include a gate dielectric film on a semiconductor substrate and/or a gate electrode. The gate electrode may include a first metal film, a first metal silicide film, and/or a conductive polysilicon film sequentially stacked on the gate dielectric film.
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