Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
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United States of America Patent
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Issued Date -
May 7, 2009
app pub date -
Nov 1, 2007
filing date -
Nov 1, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A transient voltage-suppressing (TVS) device supported on a semiconductor substrate is applied to protect an electronic device from a transient voltage. The TVS device includes a clamp diode functions with a high-side and a low side diodes for clamping a transient voltage disposed on a top layer of the semiconductor substrate insulated by a insulation layer constituting a TVS on silicon-on-insulator (SOI) device. In an exemplary embodiment, the insulator layer further includes a thick body oxide (BOX) layer having a thickness in the range of 250 Angstroms to 1 micrometer to sustain an application with a breakdown voltage higher than 25 volts. In another exemplary embodiment, the clamp diode further surrounded by a P-well and the P-well is formed on top of a P−/P+ substrate layer disposed above the insulator layer.
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