METHOD FOR CLAMPING A SEMICONDUCTOR REGION AT OR NEAR GROUND

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20090121770A1
SERIAL NO

12033600

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A clamping circuit clamps a voltage received by an n-type semiconductor region without using a Schottky transistor. The clamping circuit includes a current mirror as well as first and second bipolar transistors. The current mirror receives a first current and supplies a second current in response. The first current is received by the first bipolar transistor, and the second current is received by the second bipolar transistor. The difference between the base-emitter junction voltages of the first and second bipolar transistors, in part, defines the voltage at which the n-type region is clamped. To start-up the circuit properly, current is withdrawn from the base/gate terminals of the transistors disposed in the current mirror. The circuit optionally includes a pair of cross-coupled transistors to reduce the output impedance and improve the power supply rejection ratio.

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Patent Owner(s)

Patent OwnerAddress
ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANYBAY F1 RAHEEN INDUSTRIAL ESTATE LIMERICK CO LIMERICK V944V2

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dobkin, Robert C Monte Sereno, US 56 1312
Rankin, Samuel Patrick Phoenix, US 2 6

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