Defect recognizing method, defect observing method, and charged particle beam apparatus

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United States of America Patent

APP PUB NO 20090134327A1
SERIAL NO

12290619

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There are provided a detecting step of detecting secondary charged particles generated from an observation area of a sample when an electron beam or a focused ion beam is emitted onto the observation area under a certain irradiation condition; an image forming step of forming a plurality of observation images acquired by dividing the observation area and having an equal periodic pattern, from the secondary charged particles detected in the detecting step; and a defect recognizing step of recognizing a defect in the observation area from information on a difference acquired by comparing the plurality of observation images formed in the image forming step. Additionally, the detecting step, the image forming step, and the defect recognizing step are performed even when the electron beam or the focused ion beam is emitted onto the observation area under an irradiation condition different from the certain irradiation condition.

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Patent OwnerAddress
SII NANOTECHNOLOGY INCCHIBA COUNTY CHIBA JAPAN CHIBA-SHI CHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikku, Yutaka Chiba-shi, JP 22 446
Sato, Makoto Chiba-shi, JP 741 16366
Tashiro, Junichi Chiba-shi, JP 40 550

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