Transistor providing different threshold voltages and method of fabrication thereof
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United States of America Patent
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Nov 30, 2010
Issued Date -
N/A
app pub date -
Feb 2, 2009
filing date -
May 3, 2007
priority date (Note) -
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Abstract
A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.
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