Transistor device and method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 17, 2012
Grant Date -
May 28, 2009
app pub date -
Oct 10, 2008
filing date -
Oct 12, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A field-effect transistor device, including: a semiconductor heterostructure comprising, in a vertically stacked configuration, a semiconductor gate layer between semiconductor source and drain layers, the layers being separated by heterosteps; the gate layer having a thickness of less than about 100 Angstroms; and source, gate, and drain electrodes respectively coupled with said source, gate, and drain layers. Separation of the gate by heterosteps, rather than an oxide layer, has very substantial advantages.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully