Memory cell device with circumferentially-extending memory element
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United States of America Patent
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Mar 22, 2011
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N/A
app pub date -
Feb 9, 2009
filing date -
Oct 4, 2006
priority date (Note) -
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Abstract
A memory device comprises a contact and a pillar-shaped structure on the contact. The pillar-shaped structure includes a conductive inner element surrounded by a memory outer layer. A transition region is located at the memory outer layer above said contact. The conductive element may directly contact said contact.
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