METHOD OF CREATING SPIRAL INDUCTOR HAVING HIGH Q VALUE
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United States of America Patent
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Issued Date -
Jun 4, 2009
app pub date -
Nov 29, 2007
filing date -
Nov 29, 2007
priority date (Note) -
Abandoned
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Abstract
A method for fabricating an inductor structure having an increased quality factor (Q) is provided. In one embodiment, a substrate is provided over which a spirally patterned conductor layer is formed to produce a planar spiral inductor. A via hole is formed in the substrate within the spirally patterned conductor layer, the via hole being formed by through silicon via (TSV). Thereafter, the via hole is filled with a core layer, wherein the core layer extends from a bottom surface of the substrate to a top surface thereof.
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